Method for manufacturing a detection structure with an optimized absorption rate and said structure

摘要

The invention relates to a method for forming an electromagnetic radiation detection structure (10) comprising a MOS transistor (100) as a transducer. The method is based on the use of lateral extension elements (134, 135, 136) as a doping mask for the semiconductor layer (113P) of the transistor and etching mask for this same semiconductor layer (113P) this in order to providing contact portions (111A, 112A) of a drain and a source of the transistor (100). The invention further relates to a detection structure (10) capable of being obtained by such a method. Figure for the abstract: Figure 1