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Column address strobe write latency (CWL) calibration in a memory system
Column address strobe write latency (CWL) calibration in a memory system
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机译:存储系统中的列地址选通写延迟(CWL)校准
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摘要
Column address strobe write latency (CWL) calibration including a method for calibrating a memory system. The method includes entering a test mode at a memory device and measuring a CWL at the memory device. A difference between the measured CWL and a programmed CWL is calculated. The calculated difference is transmitted to a memory controller that uses the calculated difference for adjusting a timing delay to match the measured CWL.
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