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DC power plasma CVD diamond growth apparatus

机译:直流功率等离子体CVD金刚石生长装置

摘要

The present invention relates to a next-pole DC-powered plasma CVD diamond growth apparatus capable of synthesizing diamonds in a film form using a DC-powered plasma chemical vapor deposition method, which generates plasma to form an internal space for growing diamonds on a substrate. A chamber and a positive electrode part which is installed in the inner space of the plasma chamber to support the substrate, and which is opposite to the positive electrode part and the positive electrode part, which are grounded on one side, are provided with independent DC power supplies. It is formed of a plurality of cathode device combinations connected to, and may include a cathode unit capable of adjusting a separation distance between each cathode of the cathode device combination.
机译:本发明涉及一种下一极直流供电的等离子体CVD金刚石生长设备,该设备能够使用直流供电的等离子体化学气相沉积方法来合成薄膜形式的金刚石,该设备产生等离子体以形成用于在衬底上生长钻石的内部空间。 。在等离子体室的内部空间中安装以支撑基板的并且与在一侧接地的正电极部分和正电极部分相对的室和正电极部分设置有独立的DC。电源。它由连接到的多个阴极装置组合形成,并且可以包括能够调节阴极装置组合的每个阴极之间的间隔距离的阴极单元。

著录项

  • 公开/公告号KR1020200065605A

    专利类型

  • 公开/公告日2020-06-09

    原文格式PDF

  • 申请/专利权人 한국과학기술연구원;

    申请/专利号KR1020180152236

  • 发明设计人 이재갑;이전국;

    申请日2018-11-30

  • 分类号

  • 国家 KR

  • 入库时间 2022-08-21 10:59:38

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