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Structure and method using metal spacer for insertion of variable wide line implantation in SADP/SAQP integration
Structure and method using metal spacer for insertion of variable wide line implantation in SADP/SAQP integration
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摘要
Semiconductor devices and methods to fabricate the devices are provided. For example, a semiconductor device includes a back-end-of-line (BEOL) structure formed on a semiconductor substrate. The BEOL structure further includes at least one metallization layer comprising a pattern of elongated parallel metal lines. The pattern of elongated metal lines comprises a plurality of metal lines having a minimum width and at least one wider metal line having a width which is greater than the minimum width.
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