Selective lateral growth of silicon oxide thin films

摘要

Embodiments disclosed herein generally relate to a method of forming a silicon oxide film. The method can include performing silylation on the surface of the substrate having a terminal hydroxyl group. The hydroxyl groups on the substrate surface are then regenerated using plasma and H2O immersion to perform additional silylation. Further, the method catalyzes the exposed surface using a Lewis acid, directionally deactivates the exposed first and second surfaces, and deposits a silicon-containing layer on the sidewall surface. Including. Multiple plasma treatments can be performed to deposit a layer having a desired thickness. [Selection] Figure 3D