PUCE SEMI-CONDUCTRICE AYANT UNE ISOLATION THERMIQUE AMÉLIORÉE ENTRE UNE PARTIE DE PUISSANCE ET UNE PARTIE PÉRIPHÉRIQUE, PROCÉDÉ DE FABRICATION ET BOÎTIER LOGEANT LA PUCE

摘要

A semiconductor die (1) comprising: a structural body (3) including a power region (1b) and a peripheral region (1a), surrounding the power region (1b); at least one power device (10) in the power region (1b); and trench-insulation means (12), extending in the structural body (3) starting from the front side towards the back side along a first direction (Z), adapted to hinder conduction of heat from the power region towards the peripheral region along a second direction (X) orthogonal to the first direction (Z). The trench-insulation means (12) have an extension (d), in the second direction (X), greater than the thickness (h) of the structural body along the first direction (Z).