POLISSAGE PAR PLANARISATION MÉCANIQUE ET CHIMIQUE (CMP) D'ISOLATION DE TRANCHÉE PEU PROFONDE (STI) À FAIBLE CONCENTRATION D'ABRASIF ET COMBINAISON D'ADDITIFS CHIMIQUES

摘要

Shallow Trench Isolation (STI) chemical mechanical planarization (CMP) polishing compositions, methods and systems of use therefore are provided. The CMP polishing composition comprises abrasives of ceria coated inorganic oxide particles, such as ceria-coated silica; and dual chemical additives for providing high oxide film removal rate. The dual chemical additives comprise gelatin compounds possessing negative and positive charges on the same molecule, and non-ionic organic molecules having multi hydroxyl functional groups in the same molecule.