Method for forming Eu-doped ZnGa2O4 phosphor film

摘要

To solve the problems that in extremely few researches on ZnGaOthin film, a deposited film and a Si substrate react in an interface between both depending on film deposition conditions to change the composition of a ZnGaOupper layer film; broad light emission spread in a wavelength range of 400-700 nm by a ZnGaOhost is formed in a ZnGaOthin film having composition change; excitation energy is taken by the ZnGaOhost; and luminescence from rare earth ions is weak.SOLUTION: In the method for depositing an Eu doped ZnGaOfilm, a film deposition state can be switched to either epitaxial growth or random growth corresponding to the type of reactant gas to be introduced by depositing the film on a sapphire crystal substrate; the composition of the deposited film is maintained without causing the composition change of the film accompanying Ga diffusion to the substrate such as the prior art even in either the epitaxial growth or the random growth; and excellent luminescence properties corresponding to an application are achieved.SELECTED DRAWING: Figure 2