PROBLEM TO BE SOLVED: To provide a heat treatment method and a heat treatment apparatus capable of rapidly lowering the temperature of a susceptor. After the processing of the last semiconductor wafer of the preceding lot is completed, if the processing temperature of the succeeding lot is lower than that of the preceding lot and the stable temperature decreases, the dummy wafer is cooled to room temperature or lower. The cooled dummy wafer is placed on the quartz susceptor in the processing chamber, and the temperature of the susceptor is lowered. By repeatedly cooling the susceptor with a plurality of dummy wafers, the temperature of the susceptor can be rapidly lowered to the stable temperature of the subsequent lot. [Selection diagram] Fig. 10
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