VERBESSERTE MASKE ZUM SCHUTZ EINES HALBLEITERMATERIALS FÜR LOKALISIERTE ÄTZANWENDUNGEN

摘要

The invention relates to the chemical etching of a semiconductor material, including: - depositing at least one mask (PLP) on a first surface zone of a semiconductor material (SC); and - chemically etching (HBr) (S31) a second surface zone of the semiconductor material (SC) that is not covered by the mask (PLP). In particular, the aforementioned mask is produced in a material including polyphosphazene, which material protects the underlying semiconductor especially well.