OPTIMIERTE HERSTELLUNGSVERFAHREN EINER STRUKTUR, DIE DURCH HYBRIDISIERUNG ZUSAMMENGEBAUT WERDEN SOLL, UND VORRICHTUNG, DIE EINE SOLCHE VORRICHTUNG UMFASST

摘要

The invention relates to a method for manufacturing a semiconductor structure (100) intended to be assembled to a second support (201) by hybridization. The semiconductor structure (100) comprising an active layer (115) comprising a nitrided semiconductor. The method comprises a step of forming at least first and second inserts (145A, 145B, 146A, 146B) during which step a layer of nickel (148) is formed in contact with the support surface (101, 110, 111, 112, 113, 121, 131), and a localized physical-chemical etching step of the active layer (111, 112, 113), part of the active layer (111, 112, 113) comprising the active region ( 115) being protected by the nickel layer (148).