The subject of the invention is a method for extracting metallic impurities from a crystalline silicon wafer (10) comprising at least one application step, for a duration greater than or equal to 1 second, and preferably for a duration between 1 second and 200 seconds, a difference in electrical potential between a first electrode (22) arranged on the side of a first face (20) of the wafer (10) and a second electrode (32) arranged on the side of the second face (30) of the plate (10) for migrating the metallic impurities towards one of the first or second faces (20, 30) of the plate (10), the difference in electrical potential being, in absolute value, between IV and 10kV , and preferably between 3V and 5kV, the first electrode (22) comprising at least two tracks (24) and the second electrode (32) comprising at least one track (34) whose projection on the first face (20) of the selo plate (10) n a normal to the latter is interposed between the two adjacent tracks (24) of the first electrode (22).
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