PROCÉDÉ ET DISPOSITIF D'ÉVALUATION DE LA FORME DU BORD D'UNE TRANCHE DE SILICIUM, TRANCHE DE SILICIUM, ET PROCÉDÉ DE SÉLECTION ET PROCÉDÉ DE FABRICATION ASSOCIÉS

摘要

The present invention provides a method for evaluating an edge shape of a silicon wafer, in which as shape parameters in a wafer cross section, when defining a radial direction reference L1, a radial direction reference L2, an intersection point P1, a height reference plane L3, h1[µm], h2[µm], a point Px3, a straight line Lx, an angle θx, a point Px0, δ[µm], a point Px1, and a radius Rx[µm], the edge shape of the silicon wafer is measured, values of the shape parameters h1, h2, and δ are set, the shape parameters Rx and θx are calculated in accordance with the definition based on measurement data of the edge shape, and the edge shape of the silicon wafer is determined from the calculated Rx and θx to be evaluated. Consequently, a method for evaluating an edge shape of a silicon wafer capable of preventing an occurrence of trouble such as bursting of a formed film in a film formation process using photoresist material, for example is provided.