TRANSITOR À HAUTE MOBILITÉ D'ÉLECTRONS À BASE DE NITRURE DE GROUPE III AVEC COUCHE D'ESPACEUR/BARRIÈRE

摘要

A high electron mobility transistor (HEMT), comprises: a bottom layer of Group III nitride semiconductor material; a middle layer of Group III nitride semiconductor material on said bottom layer; a top layer of Group III nitride semiconductor material on said middle layer, opposite said bottom layer, said middle layer having a higher concentration of a Group III material than said bottom and top layers; and a 2DEG at the interface between said middle and bottom layer.