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STRUCTURES DE CIRCUITS INTÉGRÉS À GRILLE ENVELOPPANTE AYANT UNE FORTE MOBILITÉ
STRUCTURES DE CIRCUITS INTÉGRÉS À GRILLE ENVELOPPANTE AYANT UNE FORTE MOBILITÉ
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摘要
Gate-all-around integrated circuit structures having high mobility, and methods of fabricating gate-all-around integrated circuit structures having high mobility, are described. For example, an integrated circuit structure includes a silicon nanowire (504) or nanoribbon. A gate stack (508, 506) is around the silicon nanowire or nanoribbon, the gate stack including a compressively stressing gate electrode (506). A first N-type epitaxial source or drain structure (514) is at a first end of the silicon nanowire or nanoribbon. A second N-type epitaxial source or drain structure (516) is at a second end of the silicon nanowire or nanoribbon. The silicon nanowire or nanoribbon has a <110> plane between the first N-type epitaxial source or drain structure and the second N-type epitaxial source or drain structure.
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