ÉBAUCHE DE PHOTOMASQUE RÉFLÉCHISSANT ET PHOTOMASQUE RÉFLÉCHISSANT

摘要

A reflective photomask blank (10) of a first aspect includes a substrate (1); a reflective layer (2) formed on the substrate (1) ; and a light absorbing layer (4) formed on the reflective layer (2) and including a tin oxide film with a film thickness of 17 nm or more and less than 25.0 nm. Consequently, the shadowing effect of a reflective photomask for pattern transfer using extreme ultraviolet light as a light source is suppressed or reduced to improve the performance of transfer to a semiconductor substrate, and further, pattern collapse due to cleaning of the reflective photomask is suppressed.