首页> 外国专利> Détecteurs de rayons X, procédé de fabrication de tels détecteurs et systèmes d'imagerie comprenant lesdits détecteurs

Détecteurs de rayons X, procédé de fabrication de tels détecteurs et systèmes d'imagerie comprenant lesdits détecteurs

摘要

A X-ray radiation detector is disclosed which has a dual-layer structure photoconductor layer. The dual-layer structure consists of a first photoconductor layer (12) comprising a plurality of photosensitive particles and of a second photoconductor layer (22) on the first photoconductor layer (12), comprising a plurality of crystals obtained by crystal-growing photosensitive material. At least some of the plurality of photosensitive particles of the first photoconductor layer (12) may fill gaps between the plurality of crystals of the second photoconductor layer (22). A method of manufacturing the radiation detector may include: forming a first photoconductor layer (12) by applying paste, including solvent mixed with a plurality of photosensitive particles, to a first substrate (11); forming a second photoconductor layer (22) by crystal-growing photosensitive material on a second substrate (25); pressing the crystal-grown second photoconductor layer (22) on the first photoconductor layer (12) that is applied to the first substrate (11) and removing the solvent in the first photoconductor layer (12) via a drying process.

著录项

  • 公开/公告号EP2843711B1

    专利类型

  • 公开/公告日2020.06.17

    原文格式PDF

  • 申请/专利权人 Samsung Electronics Co., Ltd.;

    申请/专利号EP14181618.1

  • 发明设计人

    申请日2014.08.20

  • 分类号

  • 国家 EP

  • 入库时间 2022-08-21 10:52:56

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