HERSTELLUNGSVERFAHREN EINER FOTODIODENMATRIX AUF GERMANIUMBASIS UND MIT SCHWACHEM DUNKELSTROM

摘要

The invention relates to a method for manufacturing an optoelectronic device (1) comprising a matrix of photodiodes based on germanium comprising the following steps: ; - production of trenches (13); - deposition of an intrinsic semiconductor passivation layer (30), produced on the basis of silicon; - annealing, ensuring, for each photodiode (2), an interdiffusion of the silicon from the semiconductor layer passivation (30) and germanium of a semiconductor portion (20), thus forming a so-called peripheral zone (24) of the semiconductor portion (20), made from germanium silicon.