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An investigation of the thermoluminescence of Ge-doped SiO(2) optical fibres for application in interface radiation dosimetry.

机译:Ge掺杂的SiO(2)光纤在界面辐射剂量学中的应用的热致发光研究。

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摘要

We investigate the ability of high spatial resolution (∼120μm) Ge-doped SiO(2) TL dosimeters to measure photoelectron dose enhancement resulting from the use of a moderate to high-Z target (an iodinated contrast media) irradiated by 90kVp X-rays. We imagine its application in a novel radiation synovectomy technique, modelled by a phantom containing a reservoir of I(2) molecules at the interface of which the doped silica dosimeters are located. Measurements outside of the iodine photoelectron range are provided for using a stepped-design that allows insertion of the fibres within the phantom. Monte Carlo simulation (MCNPX) is used for verification. At the phantom medium I(2)-interface additional photoelectron generation is observed, ∼60% above that in the absence of the I(2), simulations providing agreement to within 3%. Percentage depth doses measured away from the iodine contrast medium reservoir are bounded by published PDDs at 80kVp and 100kVp.
机译:我们研究了高空间分辨率(〜120μm)掺Ge的SiO(2)TL剂量计的能力,以测量由于使用90kVp X射线辐照的中度至高Z目标(碘化造影剂)导致的光电子剂量增强。我们想象它在新型放射滑膜切除术技术中的应用,该模型由包含I(2)分子储库的模型模拟,该I(2)分子位于掺杂二氧化硅剂量计的界面处。提供碘光电子范围以外的测量值,以使用允许将光纤插入体模内的阶梯式设计。蒙特卡罗模拟(MCNPX)用于验证。在幻影介质的I(2)界面上,观察到了额外的光电子生成,比不存在I(2)的情况高出60%,模拟结果表明一致性达到3%。从碘造影剂储层处测得的深度百分比剂量受80kVp和100kVp处公布的PDD的限制。

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