High-Temperature Electronics in Japan

摘要

Wide bandgap semiconductors (SiC, GaN, AlN) have great potential of for high-temperature, high-power, high-frequency electronics, and for short-wavelength optoelectronics. Now, the rapid progress of the last few years in SiC and group III nitrides technology and device development is providing us with unique opportunities for development of the next generation of semiconductor electronics-semiconductor electronics for the 21st century. In 1999, the U.S. National Science Foundation and the Office of Naval Research assembled a panel on 'High-Temperature Electronics' to evaluate and compare the status, trends, and perspectives of wide bandgap semiconductor electronics in the U.S. and Europe, with particular emphasis on Europe. This panel was composed of individuals representing industry, academia and government organizations: Prof. T.P. Chow, Rensselaer Polytechnic Institute; Prof. S.P. DenBaars, University of California at Santa Barbara; Dr. V.A. Dmitriev, TDI, Inc. (Panel Chair); Prof. M.S. Shur, Rensselaer Polytechnic Institute; Prof. M.G. Spencer, Cornell University; and Dr. G. White, Georgia Institute of Technology. Accompanying and working with the panel during its site visits in Japan were Dr. U. Varshney of the National Science Foundation and Dr. J. Zavada of the European Research Office. This study was a continuation of the 'High Temperature Electronic in Japan' study, which has been managed by ITRI in 1998.