Semiconductor Measurement Technology: Accurate Linewidth Measurements on Integrated-Circuit Photomasks

摘要

The progress of the NBS program to develop improved theory for accurate linewidth measurements with optical microscopes, to develop primary linewidth calibration of 1- to 10-micrometer wide lines on integrated-circuit (IC) photomasks, and to provide calibrated measurement artifacts and measurement procedures to the IC industry is discussed. This report covers the initial period from September 1974 through December 1976.