Modeling of Phenomena in RF Glow-Discharge Chemical Reactor

摘要

Glow-discharge chemical reactors are widely used in the semiconductor industry for thin film fabrication processes. The most common discharge configuration is the parallel-plate reactor. The wide variety and complexity of the processes in the reactor cause difficulties in both the analytical description and the calculation. The practical needs of the industry led to a large amount of research devoted to obtaining the relationships which describe the technological parameters and their behavior as external parameters. New models of the RF discharge have appeared in recent years. The paper gives a simple qualitative explanation of the main processes in the RF gas discharge chemical reactor and their analytical description. Recommendations for computation are also given.