GaAs Peeled-Film Solar Cells. Final Report, March 15, 1980-December 31, 1981

摘要

Our approach to the fabrication of a peeled film GaAs solar cell is to grow an (AlGa)As layer between the substrate and solar cell. This (AlGa)As parting layer can be etched away selectively to separate substrate and cell. The use of an (AlGa)As parting layer has the advantage of an excellent lattice match to GaAs, which promotes the subsequent growth of a high quality single crystal solar cell. The (AlGa)As material can also be grown in the same reactor used to grow the solar cells. The technical areas most critical to the success of this project are the etch parting process, and subsequent peeled film handling and processing. Highly selective etching of the (AlGa)As is necessary for successful peeling; to peel a 1 cm diameter cell while removing less than 100 A of it requires that the etchant attack the (AlGa)As parting layer at a rate 5 x 10 exp 5 times as fast as it attacks GaAs. The peeled film so removed will be extremely fragile, unless support is provided during the parting process. (ERA citation 09:002123)