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Ion Implantation Technique for Simultaneous Formation of a Shallow Silicon p-n Junction and a Shallow Silicide-Silicon Ohmic Contact

机译：离子注入技术同时形成浅硅p-n结和浅硅化物 - 硅欧姆接触

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作者
Tsaur, B. Y.; Anderson, C. H.;
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年度 1983
页码 p.1-8
总页数 8
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Silicon; Ion implantation; Electron beams; Tungsten; Substrates; Arsenic; Annealing; Junctions; Reprints;

机译：硅;离子注入;电子束;钨;衬底;砷;退火;结;重印;
入库时间 2022-08-29 11:44:30

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专利

1. Platinum silicide ohmic contacts to shallow junctions in silicon [J] . Journal of Applied Physics . 1982,第12期

机译：硅化铂欧姆接触到硅中的浅结
2. Dual ion implantation technique for formation of shallow p+ junctions in silicon [J] . Journal of Applied Physics . 1983,第11期

机译：在硅中形成浅p + / n结的双离子注入技术
3. Enhancement of oxide break-up by implantation of fluorine in poly-Si emitter contacted p/sup +/-n shallow junction formation [J] . Shye Lin Wu, Chung Len Lee IEEE Electron Device Letters . 1994,第4期

机译：通过在聚硅发射极接触的p / sup +/- n浅结形成中注入氟来增强氧化物分解
4. Ultra-shallow p-n junction formation by ion implantation at high energy? [C] . Vyatkin, A.F., Zinenko, . 2003

机译：通过高能离子注入形成超浅p-n结？
5. Fabrication and characterization of ohmic contacts to p- and n-type silicon carbide with applications to p-n junction diodes. [D] . Oder, Tom Nelson. 1999

机译：p型和n型碳化硅的欧姆接触的制造和表征，并应用于p-n结二极管。
6. Realization of radial p-n junction silicon nanowire solar cell based on low-temperature and shallow phosphorus doping [O] . Gangqiang Dong, Fengzhen Liu, Jing Liu, 2013

机译：基于低温浅磷掺杂的径向p-n结硅纳米线太阳能电池的实现
7. Investigations of ultra shallow junction ion implanted biaxial tensile strained silicon by means of X-Ray, Raman and photoacoustic techniques [O] . Horan Ken 2012

机译：利用X射线，拉曼和光声技术研究超浅结离子注入双轴拉伸应变硅
8. Ion Implantation Technique for Simultaneous Formation of a Shallow Silicon p-n Junction and a Shallow Silicide-Silicon Ohmic Contact. [R] . Tsaur, B. Y., Anderson, C. H. 1983

机译：离子注入技术同时形成浅硅p-n结和浅硅化物 - 硅欧姆接触。

Ion Implantation Technique for Simultaneous Formation of a Shallow Silicon p-n Junction and a Shallow Silicide-Silicon Ohmic Contact

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