ELECTROMAGNETIC RADIATION SCREENING OF MICROCIRCUITS FOR LONG LIFE APPLICATIONS INTERIM REPORT - NOVEMBER 1973 THROUGH OCTOBER 1974

摘要

A theoretical and experimental study has been carried out on the utility of X-rays as a stimulus for screening high reliability semiconductor microcircuits. The theory of the interaction of X-rays with semiconductor materials and devices was considered. Experimental measurements of photovoltages, photocurrents, and effects on specified parameters were made on discrete devices and on microcircuits. The test specimens included discrete devices with certain types of identified flaws and symptoms of flaws, and microcircuits exhibiting deviant electrical behavior. With a necessarily limited sample of test specimens, no useful correlation could be found between the X-ray-induced electrical response and the known or suspected presence of flaws.