On the Conditions Required for Vacancy Loop Growth in Irradiated Metals and Alloys

摘要

A simple theoretical model is investigated which allows the conditions under which vacancy dislocation loop growth is possible to be examined. This forms an extension of previous work in that bulk defect recombination is not ignored and the effects of vacancy thermal emission are included. While the present work does not provide a kinetic model for vacancy loop growth it was possible to examine the criteria required for stable growth in some detail. The effects of network dislocation density, temperature, damage rate, the influence of other critical sinks, notably voids and grain boundaries, and interstitial dislocation loops were considered. The analog with the growth conditions for cavities as voids is highlighted. A detailed comparison with experiment is not attempted as this is being considered separately.