Metal-Nonmetal Transitions in n-Doped Many-Valley Si and Ge

摘要

The critical concentration for the metal-nonmetal transition in n doped Si and Ge is calculated. The electronic system is described by a Hubbard tight binding model Hamiltonian. The disordered arrangement of the impurity atoms, the many valley nature of the host conduction band minima and the overlap corrections of the tight binding basis set are taken into account in the calculation. The results show fair agreement when compared to previous works and available experimental data.