Image Interpretation for Transmission Electron Microscopy of Thin SemiconductorLayers and Interfaces

摘要

It is shown how computer simulation and computer processing can contribute to theinterpretation of transmission electron microscopy (TEM) images of thin semiconductor layers and interfaces. For image simulations, a model of the structure of the material or interface under investigation is postulated. From this model, images are calculated and compared with experimental images. Several examples show that it is possible to obtain quantitative results. The greatest strength of the TEM, and certainly of high resolution electron microscopy (HREM) is to enable the distinction between a limited number of structural models.