Silicon micromachined waveguides for millimeter and submillimeter wavelengths

摘要

The majority of radio receivers, transmitters, and components operating at millimeter and submillimeter wavelengths utilize rectangular waveguides in some form. However, conventional machining techniques for waveguides operating above a few hundred GHz are complicated and costly. This paper reports on the development of silicon micromachining techniques to create silicon-based waveguide circuits which can operate at millimeter and submillimeter wavelengths. As a first step, rectangular WR-10 waveguide structures have been fabricated from (110) silicon wafers using micromachining techniques. The waveguide is split along the broad wall. Each half is formed by first etching a channel completely through a wafer. Potassium hydroxide is used to etch smooth mirror-like vertical walls and LPCVD silicon nitride is used as a masking layer. This wafer is then bonded to another flat wafer using a polyimide bonding technique and diced into the U-shaped half wavelengths. Finally, a gold layer is applied to the waveguide walls. Insertion loss measurements show losses comparable to those of standard metal waveguides. It is suggested that active devices and planar circuits can be integrated with the waveguides, solving the traditional mounting problems. Potential applications in terahertz instrumentation technology are further discussed.