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ZnMgO by APCVD Enabling High-Performance Mid-Bandgap CIGS on Polyimide Modules. October 2009-October 2010

机译:通过apCVD实现ZnmgO,在聚酰亚胺模块上实现高性能中间带隙CIGs。 2009年10月至2010年10月

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This Pre-Incubator project was designed to increase the 'real world' CIGS based photovoltaic module performance and decrease the Levelized Cost of Energy (LCOE) of systems utilizing those modules compared to our traditional CIGS based photovoltaic modules. This was enabled by a) increasing the CIGS bandgap and b) developing better matched device finishing layers to the mid-bandgap CIGS based photovoltaics; including window and buffer layers (and eventually the TCO). Incremental progress in the novel device performance was demonstrated throughout the program, and ultimately achieved performance results that exceeded the milestones ahead of schedule. Metal-oxide buffer layer devices with mid-bandgap CIGS alloys on polyimide substrates were produced with efficiencies of over 12%. Corresponding mid-bandgap devices with CdS buffers produced over 13% efficient devices. Furthermore, no obvious degradation in the device performance has been observed to date, after proper storage ambient of the different types of unencapsulated devices were identified.

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