Alternative fabrication techniques for high-efficiency CuInSe(sub 2) and CuInSe(sub 2)-alloy films and cells. Final subcontract report, 1 March 1990--31 August 1992

摘要

Work performed during the course of this subcontract has led to improved CuInSe(sub 2) (CIS) processing techniques and materials resulting in improved solar cell performance (up to 10% active area efficiency) based on a thick conductive evaporated CdS window layer and an indium-tin-oxide transparent conductor. Modeling of the device performance has indicated that an optimal CdS thickness should exist if pinholes occur in the CIS layer (for example, due to adhesion failures) leading to shunts between the CdS and the back contact. Pinholes in the CIS layer have been dramatically reduced by the use of a Cu-Mo two-phase back contact metallization resulting from significant increases in adhesion between the CIS and the back contact. Controlled leaching of the Cu from the back contact apparently contributes to this improvement without degradation of the solar cells. Finally, CIS has been grown epitaxially on GaAs. Preliminary results suggest explanations for the morphology and defect structures of polycrystalline layers used in devices as well as indicating the general mechanism for growth of CIS by vapor phase methods.