Intensity dependence of the third harmonic generation efficiency for high power far infrared radiation in n-silicon

摘要

The third harmonic generation of far-infrared (FIR) laser radiation in n-doped silicon was measured for the first time with full temporal resolution of the power fluctuations during the FIR laser pulse. Thus the intensity dependence of the nonlinear coefficient (chi)(sup (3)) could be observed. For 2 MW incident power, corresponding to an intensity of 15 MW/cm(sup 2), at a wavelength of 676 (mu)m a power conversion efficiency of 10(sup -3) was reached. (author) 5 figs., 6 refs. (Atomindex citation 26:013673)