Reaction mechanism for titanium nitride CVD from TiCl(sub 4) and NH(sub 3)

摘要

A gas-phase and surface reaction mechanism for the CVD of TiN from TiCl(sub 4) and NH(sub 3) is proposed. The only gas-phase process is complex formation, which can compete with deposition. The surface mechanism postulates the stepwise elimination of Cl and H atoms from TiCl(sub 4) and NH(sub 3), respectively, to form solid TiN and gaseous HCl. The mechanism also accounts for the change in oxidation state of Ti by allowing for liberation of N(sub 2). Provided that the surface composition is at steady state, the stoichiometry of the overall reaction is reproduced exactly. In addition, the global kinetic law predicted by the mechanism is successfully fit to new deposition data from a rotating disk reactor and is shown to be consistent with literature results.