Compound semiconductor GaAs and CdTe nuclear radiation detectors

摘要

The preparation technology and characteristics of semi-insulating bulk single crystal GaAs surface-barrier detectors and single crystal CdTe surface-barrier detectors are described. The spectroscopic performance of the detectors for (gamma)-rays from (sup 125)I, (sup 241)Am and (sup 57)Co at room temperature is given. The influence of the magnitude of forward resistive induced by ohmic contacts and of the surface passivation and aging in the fabrication process of surface-barrier detectors on the performance of the detectors is discussed. Finally, the influence of the fabrication technology of ohmic contacts and selected materials, such as Ni-Ge-Au and In-Ge-Ag, on the performance of the detectors is also studied. (Atomindex citation 26:067245)