Energy dispersive X-ray reflectivity characterization of semiconductor heterostructures and interfaces

摘要

Energy dispersive X-ray reflectivity is a versatile tool for analyzing thin film structures. Layer thickness, interface roughness and composition can be determined with a single non-destructive measurement. Use of energy dispersive detection enables spectra to be acquired in less than 500 s with a rotating anode X-ray generator, making the study of kinetics possible.