MOCVD growth of AlGaN UV LEDs

摘要

Issues related to the MOCVD growth of AlGaN, specifically the gas-phase parasitic reactions among TMG, TMA, and NH(sub 3), are studied using an in-situ optical reflectometer. It is observed that the presence of the well-known gas phase adduct (TMA: NH(sub 3)) could seriously hinder the incorporation behavior of TMGa. Relatively low reactor pressures (30--50 Torr) are employed to grow an AlGaN/GaN SCH QW p-n diode structure. The UV emission at 360 nm (FWHM (approximately) 10 nm) represents the first report of LED operation from an indium-free GaN QW diode.