Growth of InAsSb/InAs/InPSb/InAs Mid-Infrared Emitters by Metal-Organic Chemical Vapor Deposition

摘要

We report on the metal-organic chemical vapor deposition (MOCVD) of strained layer superlattices (SLSs) of InAsSb/InAs/InPSb/InAs as well as mid-infrared optically pumped lasers grown using a high speed rotating disk reactor (RDR). The devices contain AlAsSb cladding layers and strained, type I, InAsSb/InAs/InPSb/InAs strained layered superlattice (SLS) active regions. By changing the layer thickness and composition of the SLS, we have prepared structures with low temperature (less than 20K) photoluminescence wavelengths ranging from 3.4 to 4.8 mu m. The optical properties of the InAsSb/InPSb superlattices revealed an anomalous low energy transition that can be assigned to an antimony-rich, interfacial layer in the superlattice. This low energy transition can be eliminated by introducing a 10.nm InAs layer between the InAsSb and InPSb layers in the superlattice. An InAsSb/InAs/InPSb/InAs SLS laser was grown on an InAs substrate with AlAs0.16Sb0.84 cladding layers. A lasing threshold and spectrally narrowed laser emission were seen from 80 through 250 K, the maximum temperature where lasing occurred. The temperature dependence of the SLS laser threshold is described by a characteristic temperature, T0=39 K, from 80 to 200 K.