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Actively Biased p-Channel MOSFET Studied with Scanning Capacitance Microscopy

机译：采用扫描电容显微镜研究的有源偏置p沟道mOsFET

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摘要

Scanning capacitance microscopy was used to study the cross section of an211u001eoperating p-channel MOSFET. We discuss the novel test structure design and the 211u001emodifications to the SCM hardware that enabled us to perform SCM while applying 211u001edc bias voltages to operate the device. The results are compared with device 211u001esimulations performed with DAVINCI.

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作者
De Wolf; Dodd; Hetherington; Nakakura; Shaneyfelt;
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年度 1999
页码 1-6
总页数 6
原文格式 PDF
正文语种 eng
中图分类工业技术;
关键词
Microscopy; Integrated circuits; Cross sections; Two dimensional; Design;

机译：显微镜;集成电路;截面;二维;设计;

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3. Channel length effect in a MOSFET structure by scanning capacitance microscopy [J] . Kang CJ., Jeon D., Kuk Y. Surface Science . 2003,第1期

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4. Actively biased p-channel MOSFET studied with scanning capacitance microscopy [C] . Nakakura, C.Y., Hetherington, Electron Devices Meeting, 1999. IEDM Technical Digest. International . 1999

机译：有源偏置p沟道MOSFET的扫描电容显微镜研究
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Actively Biased p-Channel MOSFET Studied with Scanning Capacitance Microscopy

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