CdS Nanocrystals Formed in SiO(sub 2) Substrates by Ion Implantation

摘要

In this work CdS nanocrystals were formed in SiO2 substrates by implantation ofCd and S atoms (up to 1017/cm2) and subsequent annealing (up to 900degC). The implanted and annealed layer was studied by X-ray Diffraction (XRD), UV transmittance and reflectance measurements (energy range 1.4-6.5 eV), and Ramon Spectroscopy. Upon annealing all methods proved the synthesis of CdS crystallites from the starting components, and the features characteristic of the CdS-phase were strongly consistently dependent on ion dose and annealing temperature. The analysis of the results shows that by implantation and post-implantation treatment the average size of CdS crystallites can be controlled, and that smaller CdS nanocrystals are obtained for lower doses and lower annealing temperatures.