The Formation of Resistive Oxide Films by the Implantation of Oxygen Ions

摘要

The work described in this report developed from a general study of the possible applications of ion beams to "write" microcircuit inter-connections by steering an ion beam. One method considered was the feasibility of breaking a conducting connection by forming an insulating oxide region by implantation of oxygen ions into the metal film. In order to give a reasonable ion range and stable oxide, aluminium films were selected for investigation. It was found that the resistance of the bombarded region increased in a consistent and controllable way with ion dose until an insulator was formed. The results given in this report show that the method could be applied to form resistors either as components or parts of microcircuits.