Formation of ZnTe:Cu/Ti Contacts at High Temperature for CdS/CdTe Devices. Preprint

摘要

We study the performance of CdS/CdTe thin-film devices contacted with ZnTe:Cu/Ti of various thickness at a higher-than-optimum temperature of (approx)360 C. At this temperature, optimum device performance requires the same thickness of ZnTe:Cu as for similar contacts formed at a lower temperature of 320 C. C-V analysis indicates that a ZnTe:Cu layer thickness of (approx)< 0.5 mu m does not yield the degree of CdTe net acceptor concentration necessary to reduce space charge width to its optimum value for n-p device operation. The thickest ZnTe:Cu layer investigated (1 mu m) yields the highest CdTe net acceptor concentration, lowest value of Jo, and highest Voc. However, performance is limited for this device by poor fill factor. We suggest poor fill factor is due to Cu-related acceptors compensating donors in CdS.