Characterization of Ion Implanted, Laser Annealed Silicon for Solar Cell Applications

摘要

It has been demonstrated that ion implanted silicon can be efficiently annealed using very fast pulses of laser radiation. A wide variety of analytical techniques have been used to determine the physical and electrical properties of ion implanted silicon crystals which have been annealed using the output of a pulsed ruby laser (energy density approx. 1.5 J/cm exp 2 , 15 x 10 exp -9 sec pulse duration time). Ion channeling measurements and transmission electron microscopy show that there are no extended defects remaining in the implanted region after laser annealing even when this region was made amorphous by implantation. Ion channeling measurements have been used to show that dopants occupy electrically active substitutional sites in the lattice after laser annealing even when the dopant concentration greatly exceeds the equilibrium limit of solid solubility. Results are reported. (ERA citation 05:020274)