Zn sub 3 P sub 2 as an Improved Semiconductor for Photovoltaic Solar Cells. Sixth Quarterly Report, December 1, 1979-February 29, 1980

摘要

Measurements of Mg/Zn sub 3 P sub 2 devices were extended to the light diode; and spectral response, current-voltage and EBIC measurements were used to follow the formation of the buried p/n junction. The effect of the p-doping level on the formation of the p/n junction device were also studied.