Development of Advanced Czochralski Growth Process to Produce Low-Cost 150-KG Silicon Ingots from a Single Crucible for Technology Readiness. Second Quarterly Progress Report, January 1-March 31, 1981

摘要

The modified CG2000 crystal grower construction, installation, and machine check-out was completed. The process development check-out proceeded, with several dry runs and one growth run. Several machine calibrations and functional problems were discovered and corrected. Several exhaust gas analysis system alternatives were evaluated and an integrated system approved and ordered. A contract presentation was made at the Project Integration Meeting at JPL, including cost-projections using contract projected throughput and machine parameters. Several growth runs on a development CG2000 RC grower have shown that complete neck, crown, and body automated growth can be achieved with only one operator input. Work continued for melt level, melt temperature, and diameter sensor development. (ERA citation 06:033112)