Amorphous Boron-Silicon-Hydrogen Alloys for Thin-Film Heterojunction Solar Cells. Quarterly Technical Progress Report No. 2, 1 September 1980-30 November 1980

摘要

The conductivity of a-B:Si:H films increases with substrate temperature and annealing temperature for temperatures up to 500 exp 0 C (highest investigated). However, increasing the conductivity causes the optical gap to decrease. Preliminary results on a-B:Si:H/a-Si:H heterojunction devices are not encouraging as interface states appear to limit the conversion efficiency to approx. 1.5%. (ERA citation 06:033117)