Divacancy Annealing in Crystalline Silicon Using E-Beam and Pulsed Ruby Laser Excitation

摘要

Annealing of divacancies which were produced by exp 11 B ion implantation was investigated under furnace, pulsed e-beam and pulsed ruby laser exposures. Despite orders of magnitude shorter exposure times for annealing and the concomitant expected high levels of electronic excitation and layer stress, we find that the thermal annealing mechanism observed for furnace annealing is an adequate description for divacancy annealing under e-beam exposure. The observed need for melting to remove divacancies by Q-switched laser annealing is also consistent with predictions based upon extrapolations from furnace annealing. (ERA citation 07:022548)