Investigation of a-Si and Related Semiconductors as Materials for Photovoltaic Conversion. Final Subcontract Report, 1 September 1982-31 August 1983

摘要

This report comprises four sections - each one describing research done at Harvard University on amorphous silicon for photovoltaic uses. Section I describes a new glow discharge apparatus constructed at Harvard and initial efforts to use it to fabricate films of a-Si:H. Section II describes a new analysis of space-charge-limited current measurements to obtain density of gap states results. Section III contains a description of preliminary film properties of a-Si:H, doped a-Si:H, and a-SiGe:H films produced in the new glow discharge system. Section IV presents more complete data on the films and describes improvements made to the discharge apparatus. (ERA citation 10:025425)