Analysis of Transient Radiation Upset in a 2K SRAM

摘要

Experimental characterization of the effects of power supply interconnect resistance on the transient radiation induced upset level of a 2K SRAM and correlations with rail span collapse simulations are presented. The results show that the dose rate upset threshold increases if columns of RAM cells are isolated from the V/sub SS/ supply grid. The magnitude of this increase is predicted well by computer simulations. (ERA citation 10:049575)