Dopant Incorporation in Silicon During Nonequilibrium Solidification: Comparison of Two Processes

摘要

The incorporation properties of implanted or deposited Sb into the silicon lattice during laser irradiation with a uv laser have been studied. For both implanted or deposited Sb, we find a maximum substitutional concentration of 2.1 x 10 exp 21 /cm exp 3 following laser melting and solidification at V approx. = 6 m/sec. In both cases, substitutional solubility is limited by interfacial instabilities which develop during regrowth. For the deposited case we observe in addition a much larger cellular microstructure which may result from convection induced instabilities. 13 references, 8 figures. (ERA citation 10:013364)