Stress Release in Ion Implanted Lattice Mismatched Semiconductor Heterostructures

摘要

Cantilever-beam measurements of ion-implantation induced stress in (InGa)As/GaAs, Ga(AsP)/GaP, and Ga(AsP)/GaAs strained layer superlattices (SLSs), grown either by molecular-beam epitaxy (MBE) or metalorganic chemical vapor deposition (MOCVD), have shown that a mechanism for precipitous stress-relief can be operative for room-temperature damage-energy deposition values above approx. 2 x 10 sup 20 keV/cm sup 3 . This phenomenon is correlated with the initial residual compressive stress on the composite structure and is determined by the differences in lattice parameter between the substrate and the buffer alloy-layer. (ERA citation 12:013833)